NXP USA Inc. PMDPB28UN,115 MOSFETs Transistors Arrays 510mW 20V
PMDPB28UN,115
1786-367-PMDPB28UN,115
6-UDFN Exposed Pad
RoHS Compliant
Power - Max: 510mW,Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V,Drain to Source Voltage (Vdss): 20V
In Stock Min. : 1
Mult. : 1
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PMDPB28UN,115 Tech Specifications
NXP PMDPB28UN,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Current - Continuous Drain (Id) @ 25℃ | 4.6A | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Pin Count | 6 | |
| Power - Max | 510mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 37m Ω @ 4.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |
PMDPB28UN,115 Documents
Download datasheets and manufacturer documentation for PMDPB28UN,115
- DatasheetsPMDPB28UN
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