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PDTB143EQA147 Tech Specifications

NXP  PDTB143EQA147 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case 3-XDFN Exposed Pad
Mounting Type Surface Mount
Supplier Device Package DFN1010D-3
Current-Collector (Ic) (Max) 500 mA
Product Status Active
Package Bulk
Mfr NXP USA Inc.
Series PDTB143
Power - Max 325 mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 150 MHz
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
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