In Stock
:
307 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BAP55LX,315 Tech Specifications
NXP BAP55LX,315 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 16 Weeks | |
| Package / Case | 2-XDFN | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 135mW | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Terminal Finish | Tin (Sn) | |
| Applications | ATTENUATOR; SWITCHING | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BAP55 | |
| Pin Count | 2 | |
| JESD-30 Code | R-PDSO-N2 | |
| Qualification Status | Not Qualified | |
| Diode Type | PIN - Single | |
| Capacitance @ Vr, F | 0.28pF @ 20V 1MHz | |
| Voltage - Peak Reverse (Max) | 50V | |
| Breakdown Voltage-Min | 50V | |
| Reverse Test Voltage | 20V | |
| Frequency Band | S B | |
| Diode Capacitance-Nom | 0.28pF | |
| Resistance @ If, F | 800mOhm @ 100mA 100MHz | |
| Diode Capacitance-Max | 0.28pF | |
| Minority Carrier Lifetime-Nom | 0.27 µs | |
| Diode Res Test Current | 0.5mA | |
| Diode Res Test Frequency | 100MHz | |
| Diode Forward Resistance-Max | 4.5Ohm | |
| RoHS Status | ROHS3 Compliant |
BAP55LX,315 Documents
Download datasheets and manufacturer documentation for BAP55LX,315
- DatasheetsBAP55LX
- PCN Assembly/OriginWafer Manufacturing Transfer 24/Dec/2013
- PCN PackagingLighter Reels 02/Jan/2014 Leadframe Material Update 20/Mar/2014
- Environmental InformationNXP RoHS3 Cert
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



