NXP NX7002BKS MOSFETs Transistors Arrays
NX7002BKS
1786-367-NX7002BKS
Axial
RoHS Compliant
MOSFET, DUAL N-CH, 60V, 0.24A, SOT-363-6, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:240mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):2.2ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, , RoHS Compliant:
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NX7002BKS Tech Specifications
NXP NX7002BKS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | Axial | |
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Lead Free Status / RoHS Status | -- | |
| Voltage Rated | 35V | |
| Lifetime @ Temp. | -- | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NX7002BKS | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Nexperia | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Samacsys Description | NEXPERIA - NX7002BKS - MOSFET, DUAL N-CH, 60V, 0.24A, SOT-363-6 | |
| Ihs Manufacturer | NEXPERIA | |
| Risk Rank | 5.22 | |
| Drain Current-Max (ID) | 0.24 A | |
| Operating Temperature | -55°C ~ 125°C | |
| Series | Military, MIL-PRF-39003/1, CSR13 | |
| Size / Dimension | 0.351 Dia x 0.786 L (8.92mm x 19.96mm) | |
| Tolerance | ±20% | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Type | Hermetically Sealed | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Capacitance | 47µF | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| Reference Standard | IEC-60134 | |
| JESD-30 Code | R-PDSO-G6 | |
| ESR (Equivalent Series Resistance) | -- | |
| Failure Rate | S (0.001%) | |
| Lead Spacing | -- | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Manufacturer Size Code | D | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 3.2 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Features | Military | |
| Height Seated (Max) | -- | |
| Ratings | -- |
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