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BF1206 Tech Specifications
NXP BF1206 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Panel Mount, Through Hole | |
| Surface Mount | YES | |
| Mounting Feature | Flange | |
| Shell Material | Aluminum | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Package | Retail Package | |
| Primary Material | Metal | |
| Mfr | Glenair | |
| Product Status | Active | |
| Contact Materials | Copper Alloy | |
| Contact Finish Mating | Gold | |
| Package Description | PLASTIC, SC-88, 6 PIN | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BF1206 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.74 | |
| Part Package Code | SC-88 | |
| Drain Current-Max (ID) | 0.03 A | |
| Operating Temperature | -65°C ~ 175°C | |
| Series | 806 | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Termination | Solder | |
| ECCN Code | EAR99 | |
| Connector Type | Plug, Male Pins | |
| Terminal Finish | Tin (Sn) | |
| Color | Olive Drab | |
| Fastening Type | Threaded | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Orientation | E | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Shell Finish | Olive Drab Cadmium | |
| Pin Count | 6 | |
| Shell Size - Insert | 24-5 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Configuration | COMPLEX | |
| Operating Mode | DUAL GATE, ENHANCEMENT MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 0.03 A | |
| DS Breakdown Voltage-Min | 6 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.18 W | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
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