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BAP65-02 Tech Specifications
NXP BAP65-02 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 2Pins | |
| Material | Aluminum | |
| Shape | Rectangular, Fins | |
| Package Cooled | Assorted (BGA, LGA, CPU, ASIC...) | |
| Material Finish | Blue Anodized | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| RoHS | Compliant | |
| Package Description | R-PDSO-F2 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -65 °C | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BAP65-02 | |
| Power Dissipation (Max) | 0.715 W | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NXP Semiconductors | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Risk Rank | 5.29 | |
| Part Package Code | SC-79 | |
| Series | pushPIN™ | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | Top Mount | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 85 °C | |
| Min Operating Temperature | -40 °C | |
| Applications | ATTENUATOR; SWITCHING | |
| Additional Feature | HIGH VOLTAGE | |
| HTS Code | 8541.10.00.80 | |
| Subcategory | PIN Diodes | |
| Technology | POSITIVE-INTRINSIC-NEGATIVE | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| JESD-30 Code | R-PDSO-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Attachment Method | Push Pin | |
| Height Off Base (Height of Fin) | 0.500 (12.70mm) | |
| Thermal Resistance @ Forced Air Flow | 26.38°C/W @ 100 LFM | |
| Element Configuration | Single | |
| Diode Type | PIN DIODE | |
| Power Dissipation | 715 mW | |
| Forward Current | 100 mA | |
| Forward Voltage | 1.1 V | |
| Reverse Voltage | 30 V | |
| Breakdown Voltage-Min | 30 V | |
| Thermal Resistance @ Natural | -- | |
| Diode Capacitance-Nom | 0.65 pF | |
| Diode Capacitance-Max | 0.9 pF | |
| Power Dissipation @ Temperature Rise | -- | |
| Minority Carrier Lifetime-Nom | 0.17 µs | |
| Diode Res Test Current | 0.5 mA | |
| Diode Res Test Frequency | 100 MHz | |
| Diode Forward Resistance-Max | 0.9 Ω | |
| Width | 1.575 (40.00mm) | |
| Length | 2.362 (60.00mm) | |
| Diameter | -- | |
| Radiation Hardening | No |
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