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NTE313 Tech Specifications

NTE ELECT  NTE313 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Mount Surface Mount
Surface Mount YES
Number of Pins 3Pins
Supplier Device Package 3-SMD
Weight 7.257478 g
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr NTE Electronics, Inc
Package Bag
Product Status Active
Current-Collector (Ic) (Max) 20mA
Manufacturer Part Number NTE313
Manufacturer NTE Electronics
RoHS Compliant
Package Description DISK BUTTON, O-CRDB-F3
Package Style DISK BUTTON
Package Body Material CERAMIC, METAL-SEALED COFIRED
Transition Frequency-Nom (fT) 530 MHz
Package Shape ROUND
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Risk Rank 5.76
Series -
Operating Temperature 150°C (TJ)
ECCN Code EAR99
Max Operating Temperature 150 °C
Min Operating Temperature -60 °C
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory Other Transistors
Terminal Position RADIAL
Terminal Form FLAT
Reach Compliance Code unknown
JESD-30 Code O-CRDB-F3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30 V
Max Collector Current 20 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 2mA, 10V
Gain 23dB
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 530MHz
Collector Base Voltage (VCBO) 30 V
Power Dissipation-Max (Abs) 0.15 W
Emitter Base Voltage (VEBO) 4 V
Collector Current-Max (IC) 0.02 A
DC Current Gain-Min (hFE) 25
Collector-Emitter Voltage-Max 30 V
Highest Frequency Band VERY HIGH FREQUENCY BAND
Collector-Base Capacitance-Max 1 pF
Noise Figure (dB Typ @ f) 2.5dB @ 200MHz
Width 76.2 mm
Height 12.7 mm
Length 152.4 mm
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