NTE Electronics, Inc NTE2357 Pre-Biased BJT Transistors 300 mW 50 V
NTE2357
1780-366-NTE2357
TO-226-3, TO-92-3 Short Body
RoHS Compliant
Power - Max: 300 mW,Current - Collector Cutoff (Max): 500nA,Voltage - Collector Emitter Breakdown (Max): 50 V
In Stock Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NTE2357 Tech Specifications
NTE ELECT NTE2357 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 Short Body | |
| Surface Mount | NO | |
| Supplier Device Package | TO-92S | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Manufacturer Part Number | NTE2357 | |
| Manufacturer | NTE Electronics | |
| Typical Resistor Ratio | 1 | |
| Package Type | TO-92 | |
| Typical Input Resistor | 22 | |
| Collector Current (DC) | 0.2(A) | |
| Emitter-Collector Voltage (Max) | 50(V) | |
| DC Current Gain | 50 | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.16 | |
| Part Package Code | TO-92 | |
| Series | - | |
| ECCN Code | EAR99 | |
| Type | NPN | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | BIP General Purpose Small Signal | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Power Dissipation | 0.3(W) | |
| Power - Max | 300 mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | |
| Frequency - Transition | 250 MHz | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Resistor - Base (R1) | 22 kOhms | |
| Resistor - Emitter Base (R2) | 22 kOhms | |
| Collector-Emitter Voltage-Max | 50 V |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ