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NTE2114 Tech Specifications

NTE ELECT  NTE2114 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount NO
Number of Terminals 18Terminals
Manufacturer Part Number NTE2114
Manufacturer NTE Electronics
Clock Freq Not Required(MHz)
Operating Temperature Classification Commercial
Package Type PDIP
Operating Temp Range 0C to 70C
Number of Words 1KWord
Address Bus 10(b)
Number of I/O Lines 4I/O Lines
Operating Supply Voltage (Max) 5.5(V)
Operating Supply Voltage (Typ) 5(V)
Rad Hardened No
Operating Supply Voltage (Min) 4.5(V)
Mounting Through Hole
Package Description DIP, DIP18,.3
Package Style IN-LINE
Number of Words Code 1000Words Codes
Package Body Material PLASTIC/EPOXY
Package Equivalence Code DIP18,.3
Reflow Temperature-Max (s) NOT SPECIFIED
Access Time-Max 300 ns
Operating Temperature-Max 70 °C
Rohs Code Yes
Supply Voltage-Nom (Vsup) 5 V
Package Code DIP
Package Shape RECTANGULAR
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Risk Rank 2.34
Part Package Code DIP
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8542.32.00.41
Subcategory SRAMs
Technology NMOS
Terminal Position DUAL
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Terminal Pitch 2.54 mm
Reach Compliance Code unknown
Pin Count 18
JESD-30 Code R-PDIP-T18
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 5.25 V
Power Supplies 5 V
Temperature Grade COMMERCIAL
Supply Voltage-Min (Vsup) 4.75 V
Number of Ports 1Port
Operating Mode ASYNCHRONOUS
Supply Current-Max 0.1 mA
Access Time 300
Architecture Not Required
Organization 1KX4
Output Characteristics 3-STATE
Memory Width 4
Density 4096(Bit)
Standby Current-Max 0.1 A
Memory Density 4096 bit
Parallel/Serial PARALLEL
I/O Type COMMON
Sync/Async Asynchronous
Word Size 4(b)
Memory IC Type STANDARD SRAM
Standby Voltage-Min 5 V
Supply Current 100
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