NTE Electronics, Inc NTE123A Single BJT Transistors 40 V 0.4 W 0.8 A 100
NTE123A
1780-365-NTE123A
TO-206AA, TO-18-3 Metal Can
RoHS Compliant
Collector-Emitter Voltage-Max: 40 V,Power Dissipation-Max (Abs): 0.4 W,Collector Current-Max (IC): 0.8 A,DC Current Gain-Min (hFE): 100
In Stock Min. : 1
Mult. : 1
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NTE123A Tech Specifications
NTE ELECT NTE123A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-206AA, TO-18-3 Metal Can | |
| Surface Mount | NO | |
| Supplier Device Package | TO-18 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | NTE Electronics, Inc | |
| Package | Bag | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 800 mA | |
| Manufacturer Part Number | NTE123A | |
| Manufacturer | NTE Electronics | |
| Emitter-Base Voltage | 6(V) | |
| Operating Temperature Classification | Military | |
| Package Type | TO-18 | |
| Transistor Polarity | NPN | |
| Collector-Base Voltage | 75(V) | |
| Category | Bipolar Power | |
| Operating Temp Range | -65C to 200C | |
| Collector Current (DC) | 0.8(A) | |
| Number of Elements | 1 Element | |
| Rad Hardened | No | |
| DC Current Gain | 35 | |
| Mounting | Through Hole | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Package Shape | ROUND | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Risk Rank | 2.25 | |
| Part Package Code | BCY | |
| Series | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Subcategory | Other Transistors | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Frequency | 300(MHz) | |
| Pin Count | 3 | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Power Dissipation | 0.4(W) | |
| Output Power | Not Required(W) | |
| Power - Max | 1.2 W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Current - Collector Cutoff (Max) | 10nA | |
| JEDEC-95 Code | TO-18 | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 40 V | |
| Frequency - Transition | 300MHz | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Collector Current-Max (IC) | 0.8 A | |
| DC Current Gain-Min (hFE) | 100 | |
| Collector-Emitter Voltage-Max | 40 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
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