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NTE312 Tech Specifications

NTE ELECT  NTE312 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Supplier Device Package TO-92
Material Si
Number of Terminals 3Terminals
Transistor Element Material SILICON
ECCN (US) EAR99
Maximum Gate Source Voltage (V) -30
Maximum Power Dissipation (mW) 500
Typical Power Gain (dB) 18(Min)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Automotive No
Standard Package Name TO-92
Supplier Package TO-92
Mounting Through Hole
Package Height 5.33(Max)
Package Length 5.2(Max)
Package Width 4.2(Max)
PCB changed 3
Lead Shape Through Hole
Manufacturer Part Number NTE312
Manufacturer NTE Electronics
Package Bag
Mfr NTE Electronics, Inc
Product Status Active
Package Description CYLINDRICAL, O-PBCY-W3
Package Style CYLINDRICAL
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Risk Rank 1.55
Operating Temperature -
Series -
Part Status Active
Type JFET
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code O-PBCY-W3
Qualification Status Not Qualified
Configuration Single
Operating Mode DEPLETION MODE
Power - Max 360 mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 4.5pF @ 15V
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-92
Channel Type N
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.36 W
Feedback Cap-Max (Crss) 1 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
Current - Drain (Idss) @ Vds (Vgs=0) 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 1 V @ 10 mA
Voltage - Breakdown (V(BR)GSS) 30 V
Power Gain-Min (Gp) 10 dB
RoHS Status RoHS non-compliant
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NTE312 Documents

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