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PMDT290UCE,115 Tech Specifications

Nexperia  PMDT290UCE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 4 Weeks
Surface Mount YES
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 800mA 550mA
Number of Elements 2 Elements
Series Automotive, AEC-Q101, TrenchMOS™
Published 2011
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Terminal Form FLAT
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 72 ns
Continuous Drain Current (ID) 550mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 0.38Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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