Nexperia USA Inc. PMDPB70XPE,115 MOSFETs Transistors Arrays 20V
PMDPB70XPE,115
1729-367-PMDPB70XPE,115
6-UDFN Exposed Pad
RoHS Compliant
Drain to Source Voltage (Vdss): 20V,Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
In Stock
:
244 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
PMDPB70XPE,115 Tech Specifications
Nexperia PMDPB70XPE,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 8 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Number of Pins | 6Pins | |
| Turn Off Delay Time | 33 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Tin (Sn) | |
| Max Power Dissipation | 515mW | |
| Pin Count | 6 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Turn On Delay Time | 7 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 79m Ω @ 2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V | |
| Rise Time | 16ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 15 ns | |
| Continuous Drain Current (ID) | 3A | |
| Gate to Source Voltage (Vgs) | -1V | |
| Max Dual Supply Voltage | -20V | |
| Drain to Source Breakdown Voltage | -20V | |
| FET Feature | Logic Level Gate | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
PMDPB70XPE,115 Documents
Download datasheets and manufacturer documentation for PMDPB70XPE,115
- PCN PackagingPack/Label Update 30/Nov/2016 Label Chg 12/Mar/2017
- DatasheetsPMDPB70XPE
- RohsStatementNXP-Semiconductors-company-12.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ