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PMDPB30XN,115 Tech Specifications
Nexperia PMDPB30XN,115 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 8 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 6-UDFN Exposed Pad | |
Number of Pins | 8Pins | |
Supplier Device Package | 6-HUSON-EP (2x2) | |
Current - Continuous Drain (Id) @ 25℃ | 4A | |
Turn Off Delay Time | 4 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2012 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Max Operating Temperature | 150°C | |
Min Operating Temperature | -55°C | |
Max Power Dissipation | 490mW | |
Number of Channels | 2Channels | |
Element Configuration | Dual | |
Turn On Delay Time | 40 ns | |
Power - Max | 490mW | |
FET Type | 2 N-Channel (Dual) | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V | |
Vgs(th) (Max) @ Id | 900mV @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 21.7nC @ 4.5V | |
Rise Time | 15ns | |
Drain to Source Voltage (Vdss) | 20V | |
Fall Time (Typ) | 16 ns | |
Continuous Drain Current (ID) | 4A | |
Gate to Source Voltage (Vgs) | 650mV | |
Input Capacitance | 660pF | |
FET Feature | Logic Level Gate | |
Drain to Source Resistance | 32mOhm | |
Rds On Max | 40 mΩ | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |
PMDPB30XN,115 Documents
Download datasheets and manufacturer documentation for PMDPB30XN,115
- DatasheetsPMDPB30XN
- PCN PackagingLighter Reels 02/Jan/2014 Pack/Label Update 30/Nov/2016
- RohsStatementNXP-Semiconductors-company-12.pdf
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