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 - PDTB123YT,215
 
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PDTB123YT,215 Tech Specifications
Nexperia PDTB123YT,215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 500mA | |
| Number of Elements | 1 Element | |
| Published | 2009 | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.55 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | PDTB123 | |
| Pin Count | 3 | |
| Polarity | PNP | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Power - Max | 250mW | |
| Transistor Application | SWITCHING | |
| Transistor Type | PNP - Pre-Biased | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 2.2 k Ω | |
| Resistor - Emitter Base (R2) | 10 k Ω | |
| RoHS Status | ROHS3 Compliant | 
PDTB123YT,215 Documents
Download datasheets and manufacturer documentation for PDTB123YT,215
- PCN PackagingPack/Label Update 30/Nov/2016 Label Chg 12/Mar/2017
 - DatasheetsPDTB123YT,215-Nexperia-datasheet-24570111.pdf PDTB123YT PDTB123YT,215-Nexperia-datasheet-78855253.pdf PDTB123Y Series PDTB123YT,215-Nexperia-datasheet-12511222.pdf PDTB123YT,215-NXP-Semiconductors-datasheet-8504719.pdf
 - PCN Assembly/OriginMult Devices 09/Jun/2018
 - RohsStatementNXP-Semiconductors-company-12.pdf
 
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