In Stock Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
JANTX2N6790 Tech Specifications
Micro Crystal JANTX2N6790 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Drain Current-Max (ID) | 3.5 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | RADIATION HARDENED | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-39 | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| DS Breakdown Voltage-Min | 200 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 20 W |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



