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APTGT50DDA120T3G Tech Specifications
Microsemi APTGT50DDA120T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 36 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Number of Pins | 32Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -40°C~175°C TJ | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 25Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AVALANCHE RATED | |
| Max Power Dissipation | 270W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Pin Count | 25 | |
| JESD-30 Code | R-XUFM-X25 | |
| Configuration | Dual Boost Chopper | |
| Element Configuration | Dual | |
| Case Connection | ISOLATED | |
| Power - Max | 270W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 75A | |
| Current - Collector Cutoff (Max) | 250μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 3.6nF | |
| Turn On Time | 140 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A | |
| Turn Off Time-Nom (toff) | 610 ns | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Input Capacitance (Cies) @ Vce | 3.6nF @ 25V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | 
APTGT50DDA120T3G Documents
Download datasheets and manufacturer documentation for APTGT50DDA120T3G
- DatasheetsPower Products Catalog APTGT50DDA120T3G APTGT50DDA120T3G-Microsemi-datasheet-17725293.pdf
 - PCN Design/SpecificationSP3F Plastic Frame Update 16/Jul/2015
 
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