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APTGT100TL60T3G Tech Specifications
Microsemi APTGT100TL60T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 36 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Number of Pins | 32Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 4 Elements | |
| Operating Temperature | -40°C~175°C TJ | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 16Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 340W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Pin Count | 25 | |
| JESD-30 Code | R-XUFM-X16 | |
| Configuration | Three Level Inverter | |
| Case Connection | ISOLATED | |
| Power - Max | 340W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 150A | |
| Current - Collector Cutoff (Max) | 250μA | |
| Input Capacitance | 6.1nF | |
| Turn On Time | 180 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 100A | |
| Turn Off Time-Nom (toff) | 370 ns | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Gate-Emitter Voltage-Max | 20V | |
| Input Capacitance (Cies) @ Vce | 6.1nF @ 25V | |
| VCEsat-Max | 1.9 V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
APTGT100TL60T3G Documents
Download datasheets and manufacturer documentation for APTGT100TL60T3G
- DatasheetsAPTGT100TL60T3G-Microsemi-datasheet-108046586.pdf APTGT100TL60T3G
- PCN Design/SpecificationSP3F Plastic Frame Update 16/Jul/2015
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