- All Products
- Integrated Circuits (ICs)
- Memory
- NAND512W3A2SN6E
In Stock
:
32 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
NAND512W3A2SN6E Tech Specifications
Micron Technology NAND512W3A2SN6E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 48-TFSOP (0.724, 18.40mm Width) | |
| Number of Pins | 48Pins | |
| Memory Types | Non-Volatile | |
| Operating Temperature | -40°C~85°C TA | |
| Packaging | Tray | |
| Published | 2010 | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 48Terminations | |
| ECCN Code | 3A991.B.1.A | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| HTS Code | 8542.32.00.51 | |
| Voltage - Rated DC | 3V | |
| Voltage - Supply | 2.7V~3.6V | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Supply Voltage | 3V | |
| Terminal Pitch | 0.5mm | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | NAND512-A | |
| Pin Count | 48 | |
| Voltage | 3V | |
| Memory Size | 512Mb 64M x 8 | |
| Nominal Supply Current | 8mA | |
| Memory Format | FLASH | |
| Memory Interface | Parallel | |
| Organization | 64MX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 50ns | |
| Address Bus Width | 26b | |
| Density | 512 Mb | |
| Sync/Async | Asynchronous | |
| Word Size | 8b | |
| Page Size | 512B | |
| Ambient Temperature Range High | 85°C | |
| Height | 1.2mm | |
| Length | 18.4mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
NAND512W3A2SN6E Documents
Download datasheets and manufacturer documentation for NAND512W3A2SN6E
- DatasheetsNAND SLC
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



