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- NAND02GW3B2DZA6E
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NAND02GW3B2DZA6E Tech Specifications
Micron Technology NAND02GW3B2DZA6E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 63-TFBGA | |
| Number of Pins | 63Pins | |
| Memory Types | Non-Volatile | |
| Operating Temperature | -40°C~85°C TA | |
| Packaging | Tray | |
| Published | 2010 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 63Terminations | |
| ECCN Code | 3A991.B.1.A | |
| HTS Code | 8542.32.00.51 | |
| Voltage - Supply | 2.7V~3.6V | |
| Terminal Position | BOTTOM | |
| Number of Functions | 1Function | |
| Supply Voltage | 3V | |
| Terminal Pitch | 0.8mm | |
| Base Part Number | NAND02G | |
| Pin Count | 63 | |
| Operating Supply Voltage | 3V | |
| Supply Voltage-Max (Vsup) | 3.6V | |
| Supply Voltage-Min (Vsup) | 2.7V | |
| Memory Size | 2Gb 256M x 8 | |
| Nominal Supply Current | 30mA | |
| Memory Format | FLASH | |
| Memory Interface | Parallel | |
| Organization | 256MX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 25ns | |
| Address Bus Width | 29b | |
| Density | 2 Gb | |
| Standby Current-Max | 0.00005A | |
| Access Time (Max) | 20 ns | |
| Sync/Async | Asynchronous | |
| Word Size | 8b | |
| Programming Voltage | 3V | |
| Data Polling | NO | |
| Toggle Bit | NO | |
| Command User Interface | YES | |
| Number of Sectors/Size | 2K | |
| Sector Size | 128K | |
| Page Size | 2kB | |
| Ready/Busy | YES | |
| Length | 11mm | |
| Height Seated (Max) | 1.05mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | 
NAND02GW3B2DZA6E Documents
Download datasheets and manufacturer documentation for NAND02GW3B2DZA6E
- DatasheetsNAND02GxxBxD
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