Micro Electronics Corporation 2N5309 Single BJT Transistors 60 50 V 0.1 A 0.33 W
2N5309
1604-365-2N5309
RoHS Compliant
DC Current Gain-Min (hFE): 60,Collector-Emitter Voltage-Max: 50 V,Collector Current-Max (IC): 0.1 A,Power Dissipation-Max (Abs): 0.33 W
In Stock Min. : 1
Mult. : 1
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2N5309 Tech Specifications
Micro Crystal 2N5309 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRO ELECTRONICS LTD | |
| Package Description | CYLINDRICAL, O-PBCY-W3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-PBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-92 | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 60 | |
| Collector-Emitter Voltage-Max | 50 V |
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