Microchip Technology VRF2933 RF MOSFETs Transistors 150MHz 25 dB 300W
VRF2933
1610-368-VRF2933
M177
RoHS Compliant
Frequency: 150MHz,Gain: 25 dB,Power - Output: 300W
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VRF2933 Tech Specifications
Microchip VRF2933 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | M177 | |
| Surface Mount | YES | |
| Supplier Device Package | M177 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Transistor Polarity | N-Channel | |
| Id - Continuous Drain Current | 42 A | |
| Vds - Drain-Source Breakdown Voltage | 180 V | |
| Minimum Operating Temperature | - 65 C | |
| Maximum Operating Temperature | + 150 C | |
| Forward Transconductance - Min | 8 mS | |
| Pd - Power Dissipation | 648 W | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Vgs - Gate-Source Voltage | 40 V | |
| Vgs th - Gate-Source Threshold Voltage | 3.6 V | |
| Unit Weight | 1.101341 oz | |
| Continuous Drain Current Id | 42 | |
| Package | Bulk | |
| Base Product Number | VRF2933 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Voltage Rated | 170 V | |
| Mounting Styles | Flange Mount | |
| Rds On - Drain-Source Resistance | - | |
| Package Description | 0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | VRF2933 | |
| Package Shape | ROUND | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 2.19 | |
| Drain Current-Max (ID) | 40 A | |
| Series | - | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Current Rating (Amps) | 2mA | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | 150MHz | |
| JESD-30 Code | O-CRFM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 30 MHz | |
| Configuration | N-Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 648 | |
| Case Connection | SOURCE | |
| Output Power | 300 W | |
| Current - Test | 250 mA | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating Temperature Range | - 65 C to + 150 C | |
| Gain | 25 dB | |
| DS Breakdown Voltage-Min | 170 V | |
| Channel Type | N | |
| Power - Output | 300W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | - | |
| Voltage - Test | 50 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
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