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TP2104K1-G Tech Specifications
Microchip TP2104K1-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 5 Weeks | |
Contact Plating | Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Number of Pins | 3Pins | |
Weight | 1.437803g | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 160mA Tj | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 360mW Ta | |
Turn Off Delay Time | 5 ns | |
Operating Temperature | -55°C~150°C | |
Packaging | Tape & Reel (TR) | |
Published | 2001 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Additional Feature | LOW THRESHOLD | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Number of Channels | 1Channel | |
Element Configuration | Single | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 360mW | |
Turn On Delay Time | 4 ns | |
FET Type | P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 6 Ω @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 2V @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V | |
Rise Time | 4ns | |
Drain to Source Voltage (Vdss) | 40V | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 4 ns | |
Continuous Drain Current (ID) | 160mA | |
Gate to Source Voltage (Vgs) | 20V | |
Drain-source On Resistance-Max | 6Ohm | |
Drain to Source Breakdown Voltage | -40V | |
Height | 950μm | |
Length | 2.9mm | |
Width | 1.3mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant |
TP2104K1-G Documents
Download datasheets and manufacturer documentation for TP2104K1-G
- DatasheetsTP2104
- PCN PackagingPacking Changes 10/Oct/2016
- ConflictMineralStatementMicrochip-company-68.pdf
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