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JANTXV2N2920U/TR Tech Specifications
Microchip JANTXV2N2920U/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Mounting Type | Surface Mount | |
Package / Case | 6-SMD, No Lead | |
Supplier Device Package | 6-SMD | |
Mfr | Microchip Technology | |
Package | Tape & Reel (TR) | |
Product Status | Active | |
Current-Collector (Ic) (Max) | 30mA | |
Emitter- Base Voltage VEBO | 6 V | |
Pd - Power Dissipation | 350 mW | |
Transistor Polarity | NPN | |
Maximum Operating Temperature | + 200 C | |
DC Collector/Base Gain hfe Min | 175 | |
Minimum Operating Temperature | - 65 C | |
Factory Pack QuantityFactory Pack Quantity | 1 | |
Mounting Styles | Through Hole | |
Gain Bandwidth Product fT | - | |
Manufacturer | Microchip | |
Brand | Microchip / Microsemi | |
DC Current Gain hFE Max | 600 | |
RoHS | N | |
Collector- Emitter Voltage VCEO Max | 60 V | |
Series | Military, MIL-PRF-19500/355 | |
Operating Temperature | 200°C (TJ) | |
Subcategory | Transistors | |
Technology | Si | |
Configuration | Single | |
Power - Max | 350mW | |
Product Type | BJTs - Bipolar Transistors | |
Transistor Type | 2 NPN (Dual) | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V | |
Current - Collector Cutoff (Max) | 10μA (ICBO) | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 100μA, 1mA | |
Voltage - Collector Emitter Breakdown (Max) | 60V | |
Frequency - Transition | - | |
Collector Base Voltage (VCBO) | 70 V | |
Continuous Collector Current | 30 mA | |
Product Category | Bipolar Transistors - BJT |
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