JANTXV2N2920U/TR Tech Specifications

Microchip  JANTXV2N2920U/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-SMD
Mfr Microchip Technology
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 30mA
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 350 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 175
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Through Hole
Gain Bandwidth Product fT -
Manufacturer Microchip
Brand Microchip / Microsemi
DC Current Gain hFE Max 600
RoHS N
Collector- Emitter Voltage VCEO Max 60 V
Series Military, MIL-PRF-19500/355
Operating Temperature 200°C (TJ)
Subcategory Transistors
Technology Si
Configuration Single
Power - Max 350mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V
Current - Collector Cutoff (Max) 10μA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition -
Collector Base Voltage (VCBO) 70 V
Continuous Collector Current 30 mA
Product Category Bipolar Transistors - BJT
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