- Discrete Semiconductor Products
- Transistors - Bipolar (BJT) - Single
- JANSR2N2222AUB/TR
:
24 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
JANSR2N2222AUB/TR
Microchip JANSR2N2222AUB/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Mounting Type | Surface Mount | |
Package / Case | 3-SMD, No Lead | |
Supplier Device Package | UB | |
Mfr | Microchip Technology | |
Package | Tape & Reel (TR) | |
Product Status | Active | |
Current-Collector (Ic) (Max) | 800 mA | |
Transistor Polarity | NPN | |
Emitter- Base Voltage VEBO | 6 V | |
Pd - Power Dissipation | 500 mW | |
Maximum Operating Temperature | + 200 C | |
DC Collector/Base Gain hfe Min | 30 at 500mA, 10 V | |
Minimum Operating Temperature | - 65 C | |
Factory Pack QuantityFactory Pack Quantity | 1 | |
Mounting Styles | SMD/SMT | |
Manufacturer | Microchip | |
Brand | Microchip / Microsemi | |
Maximum DC Collector Current | 800 mA | |
DC Current Gain hFE Max | 325 at 1 mA, 10 V | |
RoHS | N | |
Collector- Emitter Voltage VCEO Max | 50 V | |
Series | Military, MIL-PRF-19500/255 | |
Operating Temperature | -65°C ~ 200°C (TJ) | |
Subcategory | Transistors | |
Technology | Si | |
Configuration | Single | |
Power Dissipation | 500 | |
Power - Max | 500 mW | |
Product Type | BJTs - Bipolar Transistors | |
Transistor Type | NPN | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
Current - Collector Cutoff (Max) | 50nA | |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
Voltage - Collector Emitter Breakdown (Max) | 50 V | |
Frequency - Transition | - | |
Collector Base Voltage (VCBO) | 75 V | |
Continuous Collector Current | 800 | |
Product Category | Bipolar Transistors - BJT |
:
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ