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JAN2N2369AUA/TR Tech Specifications

Microchip  JAN2N2369AUA/TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Mfr Microchip Technology
Package Tape & Reel (TR)
Product Status Active
Emitter- Base Voltage VEBO 4.5 V
Pd - Power Dissipation 360 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 20 at 100mA, 1 V
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles SMD/SMT
Manufacturer Microchip
Brand Microchip / Microsemi
Maximum DC Collector Current 100 mA
DC Current Gain hFE Max 120 at 100 mA, 1 V
RoHS N
Collector- Emitter Voltage VCEO Max 15 V
Series Military, MIL-PRF-19500/317
Operating Temperature -65°C ~ 200°C (TJ)
Subcategory Transistors
Technology Si
Configuration Single
Power - Max 360 mW
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 1V
Current - Collector Cutoff (Max) 400nA
Vce Saturation (Max) @ Ib, Ic 450mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Frequency - Transition -
Collector Base Voltage (VCBO) 40 V
Product Category Bipolar Transistors - BJT
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