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DN3535N8-G Tech Specifications

Microchip  DN3535N8-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3Pins
Weight 52.786812mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 230mA Tj
Drive Voltage (Max Rds On, Min Rds On) 0V
Number of Elements 1 Element
Power Dissipation (Max) 1.6W Ta
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 1.6W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10 Ω @ 150mA, 0V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Rise Time 20ns
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 230mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 350V
Pulsed Drain Current-Max (IDM) 0.5A
FET Feature Depletion Mode
Height 1.6mm
Length 4.6mm
Width 2.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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