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DN2625K4-G Tech Specifications
Microchip DN2625K4-G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 19 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Number of Pins | 3Pins | |
Weight | 3.949996g | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 1.1A Tj | |
Drive Voltage (Max Rds On, Min Rds On) | 0V | |
Number of Elements | 1 Element | |
Turn Off Delay Time | 10 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2013 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
Number of Terminations | 2Terminations | |
ECCN Code | EAR99 | |
Additional Feature | LOW THRESHOLD | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
JESD-30 Code | R-PSSO-G2 | |
Qualification Status | Not Qualified | |
Number of Channels | 1Channel | |
Element Configuration | Single | |
Case Connection | DRAIN | |
Turn On Delay Time | 10 ns | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 3.5 Ω @ 1A, 0V | |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 7.04nC @ 1.5V | |
Rise Time | 20ns | |
Vgs (Max) | ±20V | |
Fall Time (Typ) | 20 ns | |
Continuous Drain Current (ID) | 1.1A | |
Gate to Source Voltage (Vgs) | 20V | |
Drain to Source Breakdown Voltage | 250V | |
FET Feature | Depletion Mode | |
Height | 2.39mm | |
Length | 6.73mm | |
Width | 6.1mm | |
RoHS Status | ROHS3 Compliant |
DN2625K4-G Documents
Download datasheets and manufacturer documentation for DN2625K4-G
- DatasheetsDN2625
- PCN Design/SpecificationDN2625 06/Dec/2016 DN2625 29/May/2017
- PCN PackagingMBB/Label Chgs 16/Nov/2018
- ConflictMineralStatementMicrochip-company-68.pdf
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