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ARF476FL Tech Specifications

Microchip  ARF476FL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case -
Mount Screw
Surface Mount YES
Number of Pins 8Pins
Supplier Device Package -
Number of Terminals 8Terminals
Transistor Element Material SILICON
RoHS Details
Transistor Polarity N-Channel
Id - Continuous Drain Current 10 A
Vds - Drain-Source Breakdown Voltage 500 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Fall Time 4 ns
Forward Transconductance - Min 3 mS
Pd - Power Dissipation 910 W
Factory Pack QuantityFactory Pack Quantity 1
Vgs - Gate-Source Voltage 30 V
Vgs th - Gate-Source Threshold Voltage 3.3 V
Unit Weight 0.462535 oz
Continuous Drain Current Id 10
Package Tray
Base Product Number ARF476
Mfr Microchip Technology
Product Status Active
Voltage Rated 500 V
Voltage, Rating 500 V
Number of Elements 2 Elements
Turn Off Delay Time 12 ns
Rds On - Drain-Source Resistance -
Mounting Styles Flange Mount
Package Style FLANGE MOUNT
Package Body Material UNSPECIFIED
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number ARF476FL
Package Shape RECTANGULAR
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 2.27
Drain Current-Max (ID) 10 A
Series -
Packaging Bulk
Pbfree Code No
ECCN Code EAR99
Type RF Power MOSFET
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Additional Feature HIGH VOLTAGE
Current Rating (Amps) 10A
Max Power Dissipation 910 W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Current Rating 10 A
Frequency 128MHz
JESD-30 Code R-XDFM-F8
Qualification Status Not Qualified
Operating Frequency 150 MHz
Configuration 2 N-Channel (Dual) Common Source
Operating Mode ENHANCEMENT MODE
Power Dissipation 910
Output Power 900 W
Turn On Delay Time 5.1 ns
Current - Test 15 mA
Transistor Application AMPLIFIER
Test Current 15 mA
Rise Time 4.1 ns
Drain to Source Voltage (Vdss) 500 V
Polarity/Channel Type N-CHANNEL
Operating Temperature Range - 55 C to + 175 C
Continuous Drain Current (ID) 10 A
Gate to Source Voltage (Vgs) 30 V
Gain 15 dB
Max Frequency 150 MHz
DS Breakdown Voltage-Min 500 V
Channel Type N
Power - Output 900W
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure -
Voltage - Test 150 V
Highest Frequency Band VERY HIGH FREQUENCY BAND
Test Voltage 150 V
Lead Free Lead Free
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