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APTGT50X60T3G Tech Specifications

Microchip  APTGT50X60T3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case SP-3
Mounting Type Chassis Mount
Surface Mount NO
Supplier Device Package SP3
Number of Terminals 25Terminals
Transistor Element Material SILICON
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 80 A
Gate-Emitter Leakage Current 600 nA
Pd - Power Dissipation 176 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 7.863095 oz
Package Bulk
Current-Collector (Ic) (Max) 80 A
Base Product Number APTGT50
Mfr Microchip Technology
Product Status Active
Package Description FLANGE MOUNT, R-XUFM-X25
Package Style FLANGE MOUNT
Moisture Sensitivity Levels 1
Package Body Material UNSPECIFIED
Turn-on Time-Nom (ton) 170 ns
Turn-off Time-Nom (toff) 310 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number APTGT50X60T3G
Package Shape RECTANGULAR
Number of Elements 6 Elements
Part Life Cycle Code Active
Ihs Manufacturer MICROSEMI CORP
Risk Rank 5.71
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Configuration 3-Phase Inverter
Power Dissipation 176
Case Connection ISOLATED
Power - Max 176 W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Operating Temperature Range - 40 C to + 175 C
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 600 V
Power Dissipation-Max (Abs) 176 W
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Collector Current-Max (IC) 80 A
Continuous Collector Current 80
IGBT Type Trench Field Stop
Collector-Emitter Voltage-Max 600 V
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20 V
Input Capacitance (Cies) @ Vce 3.15 nF @ 25 V
VCEsat-Max 1.9 V
Product IGBT Silicon Modules
Height 11.5 mm
Length 73.4 mm
Width 40.8 mm
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