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APTGT200A60T3AG Tech Specifications

Microchip  APTGT200A60T3AG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case SP3-32
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 20Pins
Supplier Device Package SP3
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 290 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 750 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Package Bulk
Current-Collector (Ic) (Max) 290 A
Base Product Number APTGT200
Mfr Microchip Technology
Product Status Active
Collector-Emitter Breakdown Voltage 600 V
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
Max Operating Temperature 175 °C
Min Operating Temperature -40 °C
Max Power Dissipation 750 W
Configuration Dual
Element Configuration Dual
Power - Max 750 W
Input Standard
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 290 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Capacitance 12.3 nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
Continuous Collector Current 290
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 12.3 nF @ 25 V
Product IGBT Silicon Modules
Radiation Hardening No
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