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APTGT100DA60T1G Tech Specifications

Microchip  APTGT100DA60T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case SP1-12
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 12Pins
Supplier Device Package SP1
RoHS Details
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 150 A
Gate-Emitter Leakage Current 400 nA
Pd - Power Dissipation 340 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 100 C
Maximum Gate Emitter Voltage 20 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 2.821917 oz
Package Bulk
Current-Collector (Ic) (Max) 150 A
Base Product Number APTGT100
Mfr Microchip Technology
Product Status Active
Collector-Emitter Breakdown Voltage 600 V
Packaging Tube
Operating Temperature -40°C ~ 175°C (TJ)
Series -
Max Operating Temperature 175 °C
Min Operating Temperature -40 °C
Max Power Dissipation 340 W
Configuration Single
Element Configuration Single
Power - Max 340 W
Input Standard
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 150 A
Current - Collector Cutoff (Max) 250 µA
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Capacitance 6.1 nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
Continuous Collector Current 150
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.1 nF @ 25 V
Product IGBT Silicon Modules
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