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APT54GA60B Tech Specifications

Microchip  APT54GA60B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Mounting Type Through Hole
Package / Case TO-247-3
Mount Through Hole
Supplier Device Package TO-247 [B]
RoHS Details
Mounting Styles Through Hole
Collector- Emitter Voltage VCEO Max 600 V
Maximum Gate Emitter Voltage - 30 V, + 30 V
Pd - Power Dissipation 416 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Factory Pack QuantityFactory Pack Quantity 1
Package Tube
Current-Collector (Ic) (Max) 96 A
Base Product Number APT54GA60
Mfr Microchip Technology
Product Status Active
Test Conditions 400V, 32A, 4.7Ohm, 15V
Collector-Emitter Breakdown Voltage 600 V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 416 W
Configuration Single
Element Configuration Single
Input Type Standard
Power - Max 416 W
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 96 A
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 32A
IGBT Type PT
Gate Charge 158 nC
Current - Collector Pulsed (Icm) 161 A
Td (on/off) @ 25°C 17ns/112ns
Switching Energy 534µJ (on), 466µJ (off)
Radiation Hardening No
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