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APT46GA90JD40 Tech Specifications

Microchip  APT46GA90JD40 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case SOT-227-4
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 4Pins
Supplier Device Package ISOTOP®
Weight 30.000004 g
RoHS Details
Collector- Emitter Voltage VCEO Max 900 V
Collector-Emitter Saturation Voltage 2.5 V
Continuous Collector Current at 25 C 87 A
Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 284 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 30 V
Mounting Styles Chassis Mount
Factory Pack QuantityFactory Pack Quantity 1
Tradename POWER MOS 8, ISOTOP
Unit Weight 1.058219 oz
Package Tube
Current-Collector (Ic) (Max) 87 A
Base Product Number APT46GA90
Mfr Microchip Technology
Product Status Active
Collector-Emitter Breakdown Voltage 900 V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series POWER MOS 8™
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 284 W
Configuration Single
Element Configuration Single
Power Dissipation 284
Power - Max 284 W
Input Standard
Collector Emitter Voltage (VCEO) 900 V
Max Collector Current 87 A
Operating Temperature Range - 55 C to + 150 C
Current - Collector Cutoff (Max) 350 µA
Voltage - Collector Emitter Breakdown (Max) 900 V
Input Capacitance 4.17 nF
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Continuous Collector Current 87
IGBT Type PT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 4.17 nF @ 25 V
Product IGBT Silicon Modules
Height 9.6 mm
Length 38.2 mm
Width 25.4 mm
Radiation Hardening No
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