Microchip Technology APT34N80B2C3G Single MOSFETs Transistors 102 A
APT34N80B2C3G
1610-369-APT34N80B2C3G
T-MAX-3
RoHS Compliant
Pulsed Drain Current-Max (IDM): 102 A
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APT34N80B2C3G Tech Specifications
Microchip APT34N80B2C3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | T-MAX-3 | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Supplier Device Package | T-MAX™ [B2] | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Mounting Styles | Through Hole | |
| Transistor Polarity | N-Channel | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Id - Continuous Drain Current | 34 A | |
| Rds On - Drain-Source Resistance | 145 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | |
| Qg - Gate Charge | 180 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 417 W | |
| Channel Mode | Enhancement | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Typical Turn-Off Delay Time | 70 ns | |
| Typical Turn-On Delay Time | 25 ns | |
| Unit Weight | 0.208116 oz | |
| Continuous Drain Current Id | 34 | |
| Package | Tube | |
| Base Product Number | APT34N80 | |
| Current - Continuous Drain (Id) @ 25℃ | 34A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Mfr | Microchip Technology | |
| Power Dissipation (Max) | 417W (Tc) | |
| Product Status | Active | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | APT34N80B2C3G | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 1.42 | |
| Drain Current-Max (ID) | 34 A | |
| Packaging | Tube | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN SILVER COPPER | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 417 | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 22A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 2mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4510 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 355 nC @ 10 V | |
| Rise Time | 15 ns | |
| Drain to Source Voltage (Vdss) | 800 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.145 Ω | |
| Pulsed Drain Current-Max (IDM) | 102 A | |
| DS Breakdown Voltage-Min | 800 V | |
| Channel Type | N | |
| Avalanche Energy Rating (Eas) | 670 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - |
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