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APT100GN120JDQ4 Tech Specifications

Microchip  APT100GN120JDQ4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 months ago)
Package / Case ISOTOP-4
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 4Pins
Supplier Device Package ISOTOP®
RoHS Details
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 1.7 V
Continuous Collector Current at 25 C 153 A
Gate-Emitter Leakage Current 600 nA
Pd - Power Dissipation 446 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Maximum Gate Emitter Voltage 30 V
Mounting Styles SMD/SMT
Factory Pack QuantityFactory Pack Quantity 1
Unit Weight 1.030000 oz
Package Tube
Current-Collector (Ic) (Max) 153 A
Base Product Number APT100
Mfr Microchip Technology
Product Status Active
Collector-Emitter Breakdown Voltage 1.2 kV
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 446 W
Configuration Single
Element Configuration Single
Power Dissipation 446
Power - Max 446 W
Input Standard
Collector Emitter Voltage (VCEO) 1.2 kV
Max Collector Current 153 A
Current - Collector Cutoff (Max) 200 µA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Input Capacitance 6.5 nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Continuous Collector Current 153
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 6.5 nF @ 25 V
Product IGBT Silicon Carbide Modules
Radiation Hardening No
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