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APTC90DSK12T1G Tech Specifications
Microchip APTC90DSK12T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Package / Case | CSON | |
Mount | Chassis Mount, Screw | |
Surface Mount | NO | |
Number of Pins | 1Pin | |
Number of Terminals | 10Terminals | |
Transistor Element Material | SILICON | |
Product Depth (mm) | 5(mm) | |
Operating Temp Range | -40C to 85C | |
Rad Hardened | No | |
Number of Elements | 2 Elements | |
RoHS | Compliant | |
Turn Off Delay Time | 400 ns | |
Package Description | FLANGE MOUNT, R-XUFM-X10 | |
Package Style | FLANGE MOUNT | |
Package Body Material | UNSPECIFIED | |
Reflow Temperature-Max (s) | NOT SPECIFIED | |
Operating Temperature-Max | 150 °C | |
Rohs Code | Yes | |
Manufacturer Part Number | APTC90DSK12T1G | |
Package Shape | RECTANGULAR | |
Manufacturer | Microsemi Corporation | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Risk Rank | 5.84 | |
Drain Current-Max (ID) | 30 A | |
Usage Level | Industrial grade | |
ECCN Code | EAR99 | |
Max Operating Temperature | 150 °C | |
Min Operating Temperature | -40 °C | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Subcategory | FET General Purpose Power | |
Max Power Dissipation | 250 W | |
Terminal Position | UPPER | |
Terminal Form | UNSPECIFIED | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | compliant | |
Pin Count | 12 | |
JESD-30 Code | R-XUFM-X10 | |
Qualification Status | Not Qualified | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 250 W | |
Case Connection | ISOLATED | |
Turn On Delay Time | 70 ns | |
Transistor Application | SWITCHING | |
Rise Time | 20 ns | |
Drain to Source Voltage (Vdss) | 900 V | |
Polarity/Channel Type | N-CHANNEL | |
Continuous Drain Current (ID) | 30 A | |
Gate to Source Voltage (Vgs) | 20 V | |
Drain Current-Max (Abs) (ID) | 30 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
Screening Level | INDUSTRIALC | |
Pulsed Drain Current-Max (IDM) | 75 A | |
Input Capacitance | 6.8 nF | |
DS Breakdown Voltage-Min | 900 V | |
Avalanche Energy Rating (Eas) | 1940 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 250 W | |
Rds On Max | 120 mΩ | |
Product Length (mm) | 7(mm) | |
Product Height (mm) | 1.4(mm) | |
Radiation Hardening | No |
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