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- DS1230Y-120IND
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DS1230Y-120IND Tech Specifications
Maxim Integrated DS1230Y-120IND technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | 28-DIP Module (0.600, 15.24mm) | |
| Surface Mount | NO | |
| Number of Pins | 28Pins | |
| Memory Types | Non-Volatile | |
| Operating Temperature | -40°C~85°C TA | |
| Packaging | Tube | |
| Published | 2002 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 28Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| HTS Code | 8473.30.11.40 | |
| Voltage - Supply | 4.5V~5.5V | |
| Terminal Position | DUAL | |
| Number of Functions | 1Function | |
| Supply Voltage | 5V | |
| Terminal Pitch | 2.54mm | |
| Frequency | 120GHz | |
| Base Part Number | DS1230Y | |
| Pin Count | 28 | |
| Operating Supply Voltage | 5V | |
| Power Supplies | 5V | |
| Memory Size | 256Kb 32K x 8 | |
| Operating Supply Current | 85mA | |
| Memory Format | NVSRAM | |
| Memory Interface | Parallel | |
| Data Bus Width | 8b | |
| Organization | 32KX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 120ns | |
| Density | 256 kb | |
| Standby Current-Max | 0.0006A | |
| Access Time (Max) | 120 ns | |
| REACH SVHC | Unknown | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DS1230Y-120IND Documents
Download datasheets and manufacturer documentation for DS1230Y-120IND
- DatasheetsDS1230Y-120IND -Dallas-Semiconductor-datasheet-121329.pdf DS1230Y-120IND -Dallas-Semiconductor-datasheet-7572125.pdf DS1230Y, AB DS1230Y-120IND -Maxim-Integrated-datasheet-10215111.pdf DS1230Y-120IND -Maxim-Integrated-datasheet-15931470.pdf
- Application NotesLow-Temperature Data Retention in Nonvolatile SRAM Substitution Rules for Nonvolatile Memory Components Lithium Battery Content in Maxim Products NV SRAM Device Programmers
- ConflictMineralStatementMaxim-Integrated-company-65.pdf
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