MagnaChip Semiconductor Ltd MMD65R380QRH Specialized Transistors
MMD65R380QRH
1520-375-MMD65R380QRH
RoHS Compliant
Power Field-Effect Transistor
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MMD65R380QRH Tech Specifications
MagnaChip MMD65R380QRH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MAGNACHIP SEMICONDUCTOR LTD | |
| Drain Current-Max (ID) | 10.6 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSSO-G2 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| Pulsed Drain Current-Max (IDM) | 31.8 A | |
| DS Breakdown Voltage-Min | 650 V | |
| Avalanche Energy Rating (Eas) | 215 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 83.3 W | |
| Feedback Cap-Max (Crss) | 38.7 pF |
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