KEXIN 2SC3357-E Single BJT Transistors
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2SC3357-E Tech Specifications
KEXIN 2SC3357-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 1uA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 12V | |
| Power Dissipation (Pd) | 1.2W | |
| DC Current Gain (hFE@Ic,Vce) | 125@20mA,10V | |
| Collector Current (Ic) | 100mA | |
| Transition Frequency (fT) | 6.5GHz | |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@50mA,5mA | |
| Package | Tape & Reel (TR) |
2SC3357-E Documents
Download datasheets and manufacturer documentation for 2SC3357-E
- Datasheets2002251133_KEXIN-2SC3357-E_C489324.pdf
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