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3DD13007MD Tech Specifications

Micro Crystal  3DD13007MD technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

RoHS true
Collector Cut-Off Current (Icbo) 100uA
Collector-Emitter Breakdown Voltage (Vceo) 400V
Power Dissipation (Pd) 45W
DC Current Gain (hFE@Ic,Vce) 8@1A,5V
Collector Current (Ic) 8A
Transition Frequency (fT) 4MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 2.5V@8A,2A
Package Tube-packed
Transistor Type NPN
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3DD13007MD Documents

Download datasheets and manufacturer documentation for   3DD13007MD

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