IXYS IXBF55N300 Single IGBTs 3000 V 3 kV
IXBF55N300
1274-372-IXBF55N300
RoHS Compliant
Voltage - Collector Emitter Breakdown (Max): 3000 V,Collector Emitter Voltage (VCEO): 3 kV,Max Power Dissipation: 357 W
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IXBF55N300 Tech Specifications
IXYS IXBF55N300 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | IXYS | |
| Package | Tube | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 86 A | |
| Test Conditions | - | |
| Maximum Gate Emitter Voltage | - 25 V, + 25 V | |
| Pd - Power Dissipation | 357 W | |
| Maximum Operating Temperature | + 150 C | |
| Unit Weight | 0.176370 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 25 | |
| Mounting Styles | Through Hole | |
| Manufacturer | IXYS | |
| Brand | IXYS | |
| Tradename | BIMOSFET | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 3 kV | |
| Package Description | ISOPLUS, I4PAK-3 | |
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 637 ns | |
| Manufacturer Package Code | ISOPLUS | |
| Turn-off Time-Nom (toff) | 475 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IXBF55N300 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Risk Rank | 8.51 | |
| Part Package Code | ISOPLUS | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Tube | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Subcategory | IGBTs | |
| Max Power Dissipation | 357 W | |
| Technology | Si | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Element Configuration | Single | |
| Case Connection | ISOLATED | |
| Input Type | Standard | |
| Power - Max | 357 W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | IGBT Transistors | |
| Collector Emitter Voltage (VCEO) | 3 kV | |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V | |
| Power Dissipation-Max (Abs) | 290 W | |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 55A | |
| Collector Current-Max (IC) | 73 A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 3000 V | |
| Gate Charge | 335 nC | |
| Current - Collector Pulsed (Icm) | 600 A | |
| Td (on/off) @ 25°C | - | |
| Switching Energy | - | |
| Gate-Emitter Voltage-Max | 25 V | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Reverse Recovery Time (trr) | 1.9 μs | |
| Product Category | IGBT Transistors |
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