Infineon Technologies AG IRF6714MPBF Specialized Transistors
IRF6714MPBF
1211-375-IRF6714MPBF
RoHS Compliant
Power Field-Effect Transistor, 29A I(D), 25V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
In Stock Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IRF6714MPBF Tech Specifications
Infineon IRF6714MPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-XBCC-N3 | |
| Drain Current-Max (ID) | 29 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-XBCC-N3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.0021 Ω | |
| Pulsed Drain Current-Max (IDM) | 234 A | |
| DS Breakdown Voltage-Min | 25 V | |
| Avalanche Energy Rating (Eas) | 175 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 89 W |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ