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IMW65R048M1H Tech Specifications

Infineon  IMW65R048M1H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON CARBIDE
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Date Of Intro 2019-12-16
Drain Current-Max (ID) 39 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247
Drain-source On Resistance-Max 0.064 Ω
Pulsed Drain Current-Max (IDM) 100 A
DS Breakdown Voltage-Min 650 V
Avalanche Energy Rating (Eas) 171 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 125 W
Feedback Cap-Max (Crss) 13 pF
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IMW65R048M1H Documents

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