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SPD06N80C3ATMA1 Tech Specifications
Infineon SPD06N80C3ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 18 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | PG-TO252-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 6A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 83W Tc | |
| Turn Off Delay Time | 72 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | CoolMOS™ | |
| Published | 2005 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 800V | |
| Current Rating | 6A | |
| Power Dissipation | 83W | |
| Turn On Delay Time | 25 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.8A, 10V | |
| Vgs(th) (Max) @ Id | 3.9V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | |
| Rise Time | 15ns | |
| Drain to Source Voltage (Vdss) | 800V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 8 ns | |
| Continuous Drain Current (ID) | 6A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 800V | |
| Input Capacitance | 785pF | |
| Drain to Source Resistance | 780mOhm | |
| Rds On Max | 900 mΩ | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
SPD06N80C3ATMA1 Documents
Download datasheets and manufacturer documentation for SPD06N80C3ATMA1
- PCN PackagingMult Dev Pkg Box Chg 3/Jan/2018
- DatasheetsSPD06N80C3
- Other Related DocumentsPart Number Guide
- Simulation ModelsCoolMOS? Power MOSFET 800V C3 Spice Model
- ConflictMineralStatementInfineon-company-51.pdf
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