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IRLML6402GTRPBF Tech Specifications

Infineon  IRLML6402GTRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier IRLML6402GTRPBF
Current - Continuous Drain (Id) @ 25℃ 3.7A Ta
Drive Voltage (Max Rds On, Min Rds On) 2.5V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.3W Ta
Turn Off Delay Time 588 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2009
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 65MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Terminal Form GULL WING
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 350 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 633pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 48ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±12V
Fall Time (Typ) 381 ns
Continuous Drain Current (ID) -3.7A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 22A
Max Junction Temperature (Tj) 150°C
Height 1.12mm
Length 3.0226mm
Width 1.397mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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