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IRGP50B60PDPBF

Infineon  IRGP50B60PDPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 390V, 33A, 3.3 Ω, 15V
Turn Off Delay Time 140 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 370W
Current Rating 75A
Element Configuration Single
Power Dissipation 370W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 33 ns
Transistor Application POWER CONTROL
Rise Time 26ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Turn On Time 59 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 50A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 190 ns
IGBT Type NPT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 34ns/130ns
Switching Energy 360μJ (on), 380μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 65ns
Height 24.99mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRGP50B60PDPBF

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