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IRGP4640DPBF Tech Specifications
Infineon IRGP4640DPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.6V | |
| Test Conditions | 400V, 24A, 10 Ω, 15V | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Published | 2006 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 250W | |
| Base Part Number | IRGP4640 | |
| Element Configuration | Single | |
| Power Dissipation | 125W | |
| Input Type | Standard | |
| Power - Max | 250W | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 1.9V | |
| Max Collector Current | 65A | |
| Reverse Recovery Time | 89 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 24A | |
| Gate Charge | 75nC | |
| Current - Collector Pulsed (Icm) | 72A | |
| Td (on/off) @ 25°C | 41ns/104ns | |
| Switching Energy | 115μJ (on), 600μJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 6.5V | |
| Fall Time-Max (tf) | 41ns | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
IRGP4640DPBF Documents
Download datasheets and manufacturer documentation for IRGP4640DPBF
- PCN PackagingMult Device Standard Label Chg 29/Sep/2017
- DatasheetsIRGx4640D(-E)PbF IRGP4640DPBF-Infineon-datasheet-41193292.pdf IRGP4640DPBF-Infineon-datasheet-34170825.pdf
- Other Related DocumentsPart Number Guide
- PCN Assembly/OriginIGBT Backend Wafer Processing 23/Oct/2013
- ConflictMineralStatementInfineon-company-51.pdf
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