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IRG4PF50WPBF Tech Specifications

Infineon  IRG4PF50WPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 900V
Collector-Emitter Saturation Voltage 2.25V
Number of Elements 1 Element
Test Conditions 720V, 28A, 5 Ω, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 200W
Terminal Position SINGLE
Current Rating 51A
Element Configuration Dual
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 29 ns
Transistor Application POWER CONTROL
Rise Time 26ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 51A
JEDEC-95 Code TO-247AC
Turn On Time 54 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 160nC
Current - Collector Pulsed (Icm) 204A
Td (on/off) @ 25°C 29ns/110ns
Switching Energy 190μJ (on), 1.06mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 220ns
Height 20.3mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRG4PF50WPBF Documents

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