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IRG4BH20K-LPBF Tech Specifications

Infineon  IRG4BH20K-LPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Weight 2.084002g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.17V
Number of Elements 1 Element
Test Conditions 960V, 5A, 50 Ω, 15V
Turn Off Delay Time 93 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 60W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Current Rating 11A
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Dual
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Rise Time 26ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4.3V
Max Collector Current 11A
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 51 ns
Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A
Turn Off Time-Nom (toff) 720 ns
Gate Charge 28nC
Current - Collector Pulsed (Icm) 22A
Td (on/off) @ 25°C 23ns/93ns
Switching Energy 450μJ (on), 440μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 400ns
Height 9.65mm
Length 10.668mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
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